Industrial igbt modules application note an 20 explanation of technical information 7 1105 v1. The term igbt is a short form of insulated gate bipolar transistor, it is a threeterminal semiconductor device with huge bipolar currentcarrying capability. Pdf the next linear collider nlc accelerator proposal at slac requires a highly efficient and reliable, low. One of the more common problemsseen in ourvariable frequency drive vfd repair division is the failure oftheigbt insulated gate bipolar transistorpower section modules if thevariable frequency drive vfd is blowing fuses, or thevfd simply is not turning on, the followingtest may aid you in finding the root of the problem a digital voltmetertest cantellifa short existsfrom the. The overvoltage stress test is setup to determine the ability of the power supplies to withstand transient voltages. Always use static esd safe handling procedures and replace the conductive gateemitter foam after testing. Fault diagnosis of open circuit multiple igbts using ppca. The module may even have hidden faults that have occurred during the repair process or have existed before. Failure mechanisms of insulated gate bipolar transistors igbts. Insulated gate bipolar transistor thermal model the switching devices are exposed to different working temperatures depending on the power losses caused by the voltage drop and the current flowing through the device at the same time. It consists of four alternating layers pnpn that are controlled by a metaloxidesemiconductor mos gate structure without regenerative action. With multimeter in diodecheck mode, the collector to emitter. The question is how to merge this source of information. Extend sq test samples, time, conditions to increase the chance of a fail and combine relevant stress conditions overtesting test with tighter specs leakage currents, uil unclamped inductive load for power mosfets burnin.
Dumitru anghelus master thesis aalborg universitet. Datasheet values, for dynamic characterization tests, refer to a specific testing setup. Safe operation of igbt igbt rbsoa diode soa short circuit vge limit others not tested by double pulse test. Why the width of two pulses is different in double pulse. In this test, the gate and emitter terminals are shorted to ensure that the device remains off figure 7a.
Igbt test with the digital multimeter is useful when the igbt module cannot easily be removed or isolated. For good insulation, the resistance usually reads in the megohm range. Testing of these igbts under pulsed conditions was very successful. Preparation of test criteria and test procedures specify electrical ratings for critical components, especially the switching devices igbts and fwds surveying the availability of switching devices, capacitors and other vulnerable components from relevant manufacturers, and the possibility for custom design and compliance for cooperation to. Never apply connector to emitter voltages greater than the igbt s vces rating and never apply gate to emitter voltages greater than the igbt s vges rating. Hipot test is the most common type of electrical safety. Each infineon automotive power module is tested in a rbsoa test igbt turnoff test minimally at the specified i crm value and minimally at the specified dvdt given in the turnoff energy loss per pulse section see 3. Device testing limitations galco industrial electronics.
The insulated gate bipolar transistor igbt is a threeterminal power semiconductor device used as an electronic switch and in newer devices is high efficiency and fast switching igbt2 it switches electric power in many modern appliances. Faq vfds how do i test the igbt power section on my. Ach550 no power test procedure to check input diodes. Failure mechanisms of insulated gate bipolar transistors igbts nathan valentine, dr. It is a threeterminal semiconductor device, those pin are labeled collectorc, gateg and emittere. This type of igbt testing procedure for amperis battery discharger is not complete, because in order to verify the complete efficiency of these modules its necessary to test them in real operating conditions however, this procedure is useful for a rapid passfail test. Fundamentals of mosfet and igbt gate driver circuits. It is a very costeffective way especially for testing high power igbt modules.
How to test an igbt using multimeter electronics post. An smu instrument can also be used to actively program the gate voltage. The display automatically returns to the identification menu. The most important parasitic components that influences switching performance are shown in this model. Go into the test procedures menu, some new tests appear. For digital products, each input condition high and low must be checked by the overvoltage test. Ib 1152 troubleshooting silicon controlled rectifiers. Accuracy, results and interpretations from these tests will vary with test equipment and the experience level of the technician performing the tests. The mm has a circuit diagram similar to hbm, but the capacitance is.
The transistor type is determined by the test that produces pairs of results. Recently, a nondestructive testing concept has been proposed by precisely control the testing time, allowing repetitive shortcircuit testing of igbts without catastrophically damages 1011. Aalborg universitet investigation on the shortcircuit. Pdf discrete package insulated gate bipolar transistor igbt devices are a popular choice for low. Igbt testing with multimeter pdf to test an igbt with multimeter, the meter should be used in diodechecking mode. Pdf analysis of high power igbt short circuit failures.
An insulatedgate bipolar transistor igbt is a threeterminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. Failure mechanisms of insulated gate bipolar transistors. Field testing scr devices thyristors elementary basic first stage field testing for device functionality. The power supplies are then stressed with overvoltage values either at 1. The solder layer fatigue and the accelerated aging process. The megger insulation tester is a small, portable instrument that gives you a direct reading of insulation resistance in ohms or megohms. Application note an01 transistor testing once you know the type of transitor that you are testing, it is a simple matter to determine which lead is which, based on the measured voltages. Proper testing of the ac drive modules is crucial to guarantee the quality and safety of the module. With a multimeter set to check diodes, check across the c1c2 e1 junction. When using a curve tracer, ramp the voltage up and back down for each test. Request pdf fault diagnosis of open circuit multiple igbt s using ppcasvm in single phase fivelevel voltage controlled hbridge mli currently, multilevel inverters mis. This application note describes methods for measuring power mosfet characteristics, both with a curve tracer and with specialpurpose test circuits.
The megger insulation tester is essentially a highrange resistance meter ohmmeter with a builtin directcurrent generator. How to check an igbt electrical engineering stack exchange. Stress of the devices 1st year of application before test. Figure 9 basic circuit diagram for measuring the input capacitance. Chapter 4 troubleshooting 47 2 igbt test procedures an igbt module that has been found to be faulty can be checked by testing it on a transistor characteristics measuring device called a transistor curve tracer ct. For the test procedure you will need a multimeter that is capable of measuring resistance. It should have battery voltage of less than 20v a typical. If the test reveals these faults, they can be repaired during the test, be. Pdf lifetime estimation of discrete igbt devices based on. Igbt ct60amdatasheet short out g1 to e1 and g2 to e2. The insulatedgate bipolar transistors igbts combine a mos gate with.
Fundamentals of mosfet and igbt gate driver circuits figure 2. Sutrisno, fault detection and prognostics of insulated gate bipolar transistor igbt using knearest neighbor. Testing power mosfets on a curve tracer is a simple matter, provided the broad. An201105 industrial igbt modules explanation of technical. A collectoremitter junction test and a gate oxide test. Igbt converters with random pulse pattern reduce the electrical noise in the machine recuperation of energy especially in endurance tests saves costs and energy compact and maintenancefriendly design task different test procedures and different engines require different dynamometers. With the module out of circuit, remove the conductive foam and short the gate to the emitter. For igbt s, parameters used to monitor performance are thermal resistance, threshold voltage, onresistance, gateemitter leakage current and collectoremitter leakage current. Hybridpack automotive power modules infineon technologies. With a multimeter set to check diodes, check across the c1c2e1 junction.
Provide a safe no power stepbystep instructions on how to determine if a ach550s input diodes or output transistors have failed. Insulated gate bipolar transistor an insulatedgate bipolar transistor igbt is a threeterminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching. To test an igbt with multimeter, the meter should be used in diodechecking mode. Ib 1152 troubleshooting silicon controlled rectifiers scrs by david darrah featured in the july 1983 issue of metal finishing during the last decade, many advances have been made in the field of electronics and electronic equipment. Testing dual igbt modules of amperis battery discharger. The hipot test the dielectric voltagewithstand test is commonly known as the hipot test. Makers of plating rectifiers have used this technology to make their products more efficient and durable. Learning objectives understanding the hipot test hipot test requirements hipot test considerations and failures arc detection. Written approval of the inhouse test procedures shall be obtained from the cotr before initiating the compliance test program.
The paper discusses framework for the study of negotiation process. Figure 6 depicts the actual test results when measuring the collectoremitter cutoff current of a 4000v igbt. Hard copies prior to january 1, 2015 are controlled. An igbt or insulated gate bipolar transistor is a semiconductor component used to power many home appliances and vehicles. V igbt handling precautions iv testing with a huntron tracker since igbt gates are insulated from any other component testing routinely requires various test equipment and test methods. The testing procedure should reveal any faults in the module. Those that know what an igbt is, know what a psu is, know what a megger is, know where the ge is. Provides fully automated power testing cycling simple touchscreen user interface for mosfet, igbt and generic twopole devices up to 3 simultaneously records diagnostic information during test. Igbt static test equipment 89 technical overview for the igbt static test equipment. It should have battery voltage of less than 20v a typical unit using 9v battery is alright. Igbt dynamic test equipment 47 technical overview for the igbt dynamic test equipment. Many designers view igbt as a device with mos input characteristics and bipolar output characteristic that is a voltagecontrolled bipolar device. With a multimeter set to check diodes, check across the c1.
So, this device is designed to make use of the benefits of both bjt and. Change the probes, you should see a diode drop on the meter. Warning igbt modules are very sensitive to esd electro static discharge. This video will show you the proper way to test if an igbt is functioning properly.
A third esd test method which has been used widely is the machine model, mm. There shall be no contradictions between the laboratory test procedure and the contractors inhouse test procedure. Verify power has been removed from the vfd for at least 5 minutes prior to proceeding. The insulated gate bipolar transistor igbt is a step1 igbt testing with multimeter. Because the internal connection between gate and cathode is a single pn junction, a meter should indicate continuity. Develop a reliability test system for igbt power modules dumitru anghelus 10 p a g e 1. Igbt test equipment overview 2 an overview of the dynex semiconductor igbt production and reliability test equipment. The insulated gate bipolar transistor igbt is a minoritycarrier device with high input impedance and large bipolar currentcarrying capability.
Power mosfet models figure 2c is the switching model of the mosfet. Accelarated aging test procedure and results for pt. With the module out of circuit remove the conductive foam and short the gate to emitter. If an appliance appears to be shortcircuiting, you can perform a test. The complete guide to electrical insulation testing. The ovsc laboratory test procedures, prepared for the limited purpose of use by.
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